Gallium Nitride RF Power Amplifier Designer

Our client is India’s first Gallium Nitride (GaN for short) deep-tech semiconductor product company for radio-frequency electronics and power electronics. Their vertical technology integration – from making GaN wafers (materials), using their proprietary semiconductor manufacturing processes to realize GaN components and their design – enables them to develop solutions for compact, efficient and high-power solutions across the strategic, telecom and consumer use-cases.

We are seeking a talented Gallium Nitride (GaN) RF Designer with proven expertise in designing high-performance power amplifiers to join in advancing GaN technology for a multitude of use-cases.

In this role, you will be pivotal in designing and developing high-efficiency GaN power amplifiers for next-gen wireless transmit applications. You will tackle complex design challenges and work on state-of-the-art projects that push the boundaries of current technology.

Responsibilities

Innovative Design : Lead the design and optimization of GaN power amplifiers which could be internally matched (IMFETs) devices, eval boards, hybrid MICs and MMICs, focusing on cutting-edge applications such as compact solid-state power amplifiers and linear point to point data links, among others. Leverage advanced tools and techniques to achieve superior performance metrics.

Advanced Simulation : Use simulation tools to model and analyze RF circuit behaviours. Apply predictive analysis to pre-emptively address potential issues and enhance design robustness.

Hands-On assembly, fabrication and Testing : Collaborate closely with fabrication and assembly teams, both in-house and external, to oversee the production of power amplifiers. Develop and implement rigorous testing protocols to validate performance against high standards.

Collaborative Innovation : Work alongside a multidisciplinary team to bring to bear RF circuit design requirements to the materials, process, device and packaging & assembly teams. Contribute to brainstorming sessions and technical reviews to drive project success.

Documentation and Communication : Produce comprehensive design documentation and reports. Effectively communicate technical insights and progress to stakeholders and project teams, facilitating informed decision-making.

Qualifications

Education : Master’s or PhD in EE / ECE / E&I Engineering, Microwave Engineering, or related field.

Experience : At least 2+ years of experience post-education in RF design with a focus on power amplifiers. Proven ability to work with foundry PDKs towards high-efficiency PA designs and PA product development is essential.

Technical Expertise : Deep knowledge of RF PA design. Background in GaN technology is desirable. Proficiency in advanced simulation tools like Keysight ADS, HFSS and CST. Experience with high-efficiency PA design is preferrable.

Analytical Skills : Strong ability to analyze and comprehend RF device level measurement and simulation data to solve intricate design problems on a stringent timeline.

Communication Skills : Excellent verbal and written communication skills, with experience presenting technical information to diverse audiences.

Preferred Qualifications :

Experience with RF PA design and specifically GaN PA design would be preferable.

Background in PA design for strategic and telecom sector.

What We Offer :

Competitive salary with performance-based bonuses and ESOPs.

Comprehensive benefits package including health insurance and retirals.

Opportunities for professional growth through mentorship, training, and career advancement programs.

A tightly-knit, collaborative and inclusive work environment where innovation is expected & encouraged.