R&D - Embedded Non Volatile Memory Engineer

About The Business Tata Electronics Private Limited (TEPL) is a greenfield venture of the Tata Group with expertise in manufacturing precision components.

Tata Electronics (a wholly owned subsidiary of Tata Sons Pvt. Ltd.) is building India’s first AI-enabled state-of-the-art Semiconductor Foundry. This facility will produce chips for applications such as power management IC, display drivers, microcontrollers (MCU) and high-performance computing logic, addressing the growing demand in markets such as automotive, computing and data storage, wireless communications and artificial intelligence.

Tata Electronics is a subsidiary of the Tata group. The Tata Group operates in more than 100 countries across six continents, with the mission 'To improve the quality of life of the communities we serve globally, through long term stakeholder value creation based on leadership with Trust.’

Responsibilities

Integration responsibilities to add eNVM (embedded Non Volatile Memory) Features to 28-110nm platform technologies including MTP and Flash . Work with IP providers, as needed, to implement these features.

Design and Layout of bit cell and test chips to aid in device / technology optimization, rel assessment and SPICE model extraction

Develop the eNVM process while meeting a diverse set of objectives (macro size, cost, endurance, retention, manufacturability, read / write speed, yield, etc)

Work with designers to spec macros that are competitive

Write test program to test bit cells and macros for yield and reliability. Optimize test program for reliability and performance.

Present to customers, peers and executives

Manage the overall project

Travel could be required

Essential Attributes

Ability to manage semiconductor technology projects

Able to work independently, self-motivated with a strong drive to win.

Ability to work across diverse cross-functional teams spread across the world.

Good communicator with inclusive style

An avid learner, you approach challenges with curiosity and resilience, seeking data to help build understanding.

You’re a collaborative team player, building relationships, humbly offering support and openly welcoming approaches.

Innovative and creative, you proactively explore new ideas and adapt quickly to change.

Qualifications

M.S or PhD in Electrical Engineering, Materials Science or equivalent

Strong understanding of CMOS and eNVM device physics , process modules , yield improvement, failure mechanisms, analytical techniques (physical and electrical)

Deep understanding of key eNVM technologies ( charge trap, floating gate, RRAM, MRAM , etc).

Understanding of technology parameters and figures of merit ( bit cell size, macro size, endurance, retention, power, latency, mask count , etc); experience in achieving competitive performance

Proven track record in delivering eNVM technologies into volume manufacturing

Ability to lead cross-functional teams and achieve project completion within timeline and cost targets

Ability to work across different cultures and geographies

Good team player

Innovation and competitive mindset

Desired Experience Level

10+ years experience in the semiconductor industry, most of which will be in the memory field

Proven track record of successfully developing new technologies into high volume production

Proven problem solving skills using design of experiments and analytical tools